| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e616715d5df2c9771d2f87cbc97f8399
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7f9a04e08c4aa373703548d3fe98c787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7720c8e1e963d7cc617c5e1879612de |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-425 |
| filingDate |
2005-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36470fc7e6101b7c657612dc0f12430e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_585be0d030a1a2085b6951adf5a1a8eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_169a9292296714d815eae7852281ffb5 |
| publicationDate |
2006-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006024932-A1 |
| titleOfInvention |
Methods of forming semiconductor devices including removing a thickness of a polysilicon gate layer |
| abstract |
Embodiments of the present invention provide methods of forming a semiconductor device including forming a polysilicon layer on a semiconductor substrate and doping the polysilicon layer with P-type impurities. The semiconductor substrate including the polysilicon layer is annealed and then an upper portion having a first thickness of the annealed polysilicon layer doped with the P-type impurities is removed. The first thickness is selected to remove defects formed in the polysilicon layer during doping and/or annealing thereof. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017092500-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10366893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016280961-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008237751-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106663631-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7449413-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10131819-B2 |
| priorityDate |
2004-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |