| abstract |
A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: n n nwherein R 1 , R 2 and R 3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, nand a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained. |