| abstract |
Disclosed is a resist pattern forming method wherein an exposure mask with a light blocking film having a fine opening not greater than a wavelength of exposure light is placed close to a resist layer provided on a substrate and wherein exposure light is projected to the resist layer through the exposure mask, whereby the resist layer is exposed with near-field light leaking from the fine opening such that a pattern of the exposure mask is transferred to the resist layer. The method includes a resist layer forming step for forming, on the substrate, a negative type resist layer with a thickness not less than a leakage depth of the near-field light, an exposure step for exposing the negative type resist layer with the near-field light, and a development step for developing the exposed negative type resist layer by use of a developing liquid to form a pattern in a region being shallower than the thickness of the negative type resist layer. |