| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73d55b44219a84c850812a4488def924 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate |
2005-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e656a3d0ca4dae98ace8ab355072c42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e0b55a46bc446dfa49150b6204c5d6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43e53136ef8304b11bee340c822e2721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85a809e116389b7da4d55e907a87e446
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c799067d43ee1089529a636c63f6a690 |
| publicationDate |
2006-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006011916-A1 |
| titleOfInvention |
Substrate for epitaxial growth, process for producing the same, and multi-layered film structure |
| abstract |
A substrate for epitaxial growth includes a silicon-containing substrate, a silicon-germanium film, and a network-shaped structure. The silicon-germanium film is formed lamellarly on the silicon-containing substrate. The network-shaped structure is disposed adjacent to an interface between the silicon-containing substrate and the silicon-germanium film, and is composed of a 90-degree-dislocation dislocation line elongating continuously. The 90-degree-dislocation dislocation line making the network-shaped structure elongates remarkably long without being broken to short lengths interruptedly so that the 90-degree dislocation is disposed cyclically in planes parallel to the interface. Accordingly, the 90-degree dislocation is present uniformly in planes parallel to the interface. Consequently, strains in the crystal lattice of the silicon-germanium film have been uniformly relaxed more securely. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11600706-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10176991-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653639-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013202005-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022393003-A1 |
| priorityDate |
2004-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |