| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45514 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 |
| filingDate |
2005-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29d86490305cf48157d6d4c81a0de428
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1216cd9e0b6675edb9350f77f7921df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f18e26175c50ccb976418978ceb8da8 |
| publicationDate |
2006-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006008595-A1 |
| titleOfInvention |
Film-forming method |
| abstract |
A plurality of gases are prevented from being mixed with each other in a gas supply path when forming a film on a substrate to be processed so as to prevent generation of particles to enable a stable and clean film formation. A film containing metal is formed on a substrate to be processed by supplying a first process gas containing the metal and a second process gas for reducing the first process gas to a process chamber. The first process gas is supplied from a first gas supply passage to the process chamber. The second process gas is supplied from a second gas supply passage to the process chamber and the second process gas is plasma-excited in the process chamber. A first reverse flow preventing gas consisting of H 2 or He is supplied to the process chamber from the first gas supply passage when supplying the second process gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007151509-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007083480-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011124201-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8225745-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1981068-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006029748-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7491430-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7942970-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8551564-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009166622-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1981068-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8309175-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009117271-A1 |
| priorityDate |
2004-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |