| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_62f941494409aea84f621977c5f0ab81 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F17-0006 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01P11-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 |
| filingDate |
2005-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_870956321232b9f42afb88dbe1226c92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bce2eb928da6e415bf671a88accb0aa5 |
| publicationDate |
2006-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006001124-A1 |
| titleOfInvention |
Low-loss substrate for high quality components |
| abstract |
Methods and apparatus providing high quality factor (Q) components on low loss substrates. A substrate is fabricated having a plurality of substrate support elements. A bridging layer is formed on the substrate that is supported by the support elements. A component is formed on the bridging layer. CMOS-compatible processing of silicon substrates may be used. One or more cavities comprising high aspect-ratio trenches may be formed using a low-temperature fabrication sequence which reduces the high-frequency losses in silicon at RF frequencies. The cavities (trenches) are subsequently bridged over or refilled with a dielectric to close the open areas and create a rigid low-loss structure. The structures mechanically-robust and are compatible with any packaging technology. An exemplary one-turn 0.8 nH inductor fabricated on trenched silicon support elements exhibited a very high peak Q of 70.6 at 8.75 GHz with a self-resonant frequency larger than 15 GHz. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012018818-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9923101-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629756-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8723276-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022229173-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11145767-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8324692-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012025345-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013006337-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103053020-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014070366-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921954-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009002915-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011068420-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9527725-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011304013-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3122415-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7933112-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492868-B2 |
| priorityDate |
2004-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |