| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2005-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0fb3c7259272e8c40f6a7ae4fa11039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f40b46dc95c69dc08c75eb21724ed650 |
| publicationDate |
2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005280027-A1 |
| titleOfInvention |
Semiconductor device with ohmic electrode formed on compound semiconductor having wide band gap and its manufacture method |
| abstract |
A first film of rare-earth metal is formed on a semiconductor region of compound semiconductor exposed on a substrate. A second film essentially comprising silicon is formed on the surface of the first film. The first and second films are heated to silicidate at least a portion of the first film in contact with the second film. It is possible to lower the contact resistance of an ohmic electrode formed on semiconductor having a wide band gap. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7566651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7749890-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7637009-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007222466-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008237867-A1 |
| priorityDate |
2002-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |