| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36277da528899dfdded290dd083c3a4a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36 |
| filingDate |
2004-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f98930c0833bbf4dda2fd884a53f4d98 |
| publicationDate |
2005-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005272229-A1 |
| titleOfInvention |
Strained Si formed by anneal |
| abstract |
A semiconductor structure includes a silicon substrate layer, a relaxed silicon-germanium layer on the silicon substrate layer and a strained single crystal silicon layer on the silicon-germanium layer. The silicon-germanium layer may include a thickness of 500 angstroms or less. The method for forming the semiconductor structure includes epitaxially forming the silicon-germanium layer and the single crystal silicon layer. The silicon-germanium layer is stressed upon formation. After the single crystal silicon layer is formed over the silicon-germanium layer, an RTA or laser heat treatment process selectively melts the silicon-germanium layer but not the single crystal silicon layer. The substantially molten silicon-germanium relaxes the compressive stresses in the silicon-germanium layer and yields a relaxed silicon-germanium layer and a strained single crystal silicon layer upon cooling. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008035846-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010081259-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009297395-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8138066-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022293414-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4060716-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8445364-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015179473-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865572-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865571-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010037577-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3120738-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10615267-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017263731-A1 |
| priorityDate |
2004-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |