| abstract |
In a substrate for growth of a chemical compound semiconductor, at least on one surface of a Si single crystal substrate 2 with a thickness of 300 μm, a porous Si single crystal 4 is formed. Pores of the porous Si single crystal 4 is opened outward. The surface of the porous Si single crystal 4 is covered by a 3C—SiC single crystal layer 3 with a thickness of 1 nm. The thickness of the porous Si single crystal 4 is, for example, 10 μm. |