| abstract |
A surface component film ( 2 ) is etched using a resist ( 3 ) as a mask, and the surface component film ( 2 ) is patterned according to the shape of an aperture ( 3 a ). This results in a step portion ( 4 ) having the same shape as the aperture ( 3 a ), with the sidewall ( 4 a ) of the step portion ( 4 ) exposed through the aperture ( 3 a ). The aperture ( 3 a ) is spin-coated with a shrink agent, reacted at a first temperature, and developed to shrink the aperture ( 3 a ). To control the shrinkage with high accuracy, in the first round of reaction, the aperture is shrunk by, for example, about half of the desired shrinkage. The aperture ( 3 a ) is further spin-coated with a shrink agent, reacted at a second temperature, and developed to shrink the aperture ( 3 a ). In this embodiment, the second-round shrink process will result in the desired aperture length. The second temperature is adjusted based on the shrinkage in the first round. With respect to a resist using short-wavelength light (short-wavelength resist) or a resist using electron beam (electron beam resist), a minute aperture can be obtained with stable shrink effect and accurate control of the length thereof. |