| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2004-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5719b5ace1d9eddf581c899aa9e459ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfd6af2623d6fa87dea494cb14af1ffd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c809df2efd5eca9da0c1cf00a4142a44 |
| publicationDate |
2005-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005253166-A1 |
| titleOfInvention |
Thermal anneal process for strained-Si devices |
| abstract |
A method is disclosed for forming a semiconductor device using strained silicon. After forming a first substrate material with a first natural lattice constant on a device substrate and a second substrate material with a second natural lattice constant on the first substrate material, a channel, source and drain regions of a field effective transistor are further defined using the first and second substrate materials. After implanting one or more impurity materials to the source and drain regions, and the transistor goes through an annealing process using a high speed heat source other than a Tungsten-Halogen lamp. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006046376-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745334-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009020757-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7795119-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7528028-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008081471-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009108358-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006286758-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007010073-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8633545-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006046376-B4 |
| priorityDate |
2004-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |