http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005244721-A1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
filingDate 2004-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45d810bca8413f7a789db00ec8997e5d
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publicationDate 2005-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2005244721-A1
titleOfInvention Composite layer method for minimizing PED effect
abstract A novel composite layer structure method which is suitable for reducing post-exposure delay (PED) effects associated with fabricating a photolithography reticle or mask and eliminating or at least minimizing variations between intended and realized critical dimension values for a circuit pattern fabricated on the reticle or mask. The method includes providing a mask blank having a metal layer, providing a photoresist layer on the metal layer of the mask blank, providing a protective layer on the photoresist layer and photo-cracking the photoresist layer in the desired circuit pattern typically by electron beam exposure. During subsequent post-exposure delay periods, the protective layer prevents or minimizes Q-time narrowing of the photo-cracked photoresist, and consequently, prevents or minimizes narrowing of the critical dimension of a circuit pattern etched in the metal layer according to the width of the photo-cracked photoresist.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9442229-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015087152-A1
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Total number of triples: 28.