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filingDate 2005-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddb7f4b9b41926ceddf3b0305fd47ed0
publicationDate 2005-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2005238818-A1
titleOfInvention Plasma processing method and plasma processing apparatus
abstract A plasma processing method and a plasma processing apparatus. The plasma processing method includes: a placing process for placing the electrode material layer between a pair of electrodes formed in a vacuum chamber; a gas supply process for supplying a plasma processing gas into the vacuum chamber; and a electric field setting process for applying a main AC voltage superimposed on a reference voltage to one of the pair of electrodes via a capacitor and for keeping the other electrode at the reference potential. The placing process includes a process for locating the electrode material layer to be closer to the other electrode than to the one electrode. Moreover, the electric field setting process may include a process for applying an additional AC voltage having a lower frequency than a frequency of the main AC voltage between the other electrode and the reference potential.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11538664-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8475724-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013189838-A1
priorityDate 2004-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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