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publicationDate 2005-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2005189652-A1
titleOfInvention Method for fabricating a silicide film, multilayered intermediate structure and multilayered structure
abstract A silicon substrate is prepared, and a titanium intermediate layer is formed on the silicon substrate. Then, a compound element-containing layer containing compound elements to compose an intended silicide film is formed on the titanium intermediate layer, to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer.
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