| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
2004-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb3a663e735d11965573ca1d9560aa8c |
| publicationDate |
2005-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005189577-A1 |
| titleOfInvention |
Metal-insulator-metal (MIM) capacitor structure formed with dual damascene structure |
| abstract |
A microelectronic product and a method for fabricating the same each provide a capacitor formed interposed between a first dielectric layer and a second dielectric layer formed over a substrate having a first contact region and a second contact region exposed therein. The capacitor is also connected to a first conductor stud that penetrate4s the first dielectric layer and contacts the first contact region and a second conductor stud that penetrates the second dielectric layer. A contiguous conductor interconnect and conductor stud layer is formed within a dual damascene aperture through the second dielectric layer and the first dielectric layer and contacting the second contact region. An etch stop layer employed when forming a trench within the dual damascene aperture also passivates a capacitor sidewall. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006024899-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10504959-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007216029-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7122878-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8895385-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7250334-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1943679-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8890224-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7944020-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8607424-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005221575-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7422954-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018211995-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014017873-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1943679-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014015101-A1 |
| priorityDate |
2004-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |