| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-10 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 |
| filingDate |
2004-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c63d3224ba63253a6f353597c16bcd9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a85af4f3228114fb347f9fedab59c0df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33b24f992e78b569ad513ae51a8de2e3 |
| publicationDate |
2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005176185-A1 |
| titleOfInvention |
Fabrication method of thin-film transistor array with self-organized organic semiconductor |
| abstract |
The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before depositing an organic semiconductor active layer on the substrate, the organic semiconductor material is deposited on only the organic semiconductor active layer having an island shape. Therefore, it is not necessary to use a shadow mask method or a photolithography method to manufacture an active matrix array. Accordingly, the present invention has advantages in that it is possible to obtain a high resolution thin film transistor array and to prevent characteristics of the thin film transistors in the array from being deteriorated. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007152210-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012003796-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8735870-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7646012-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007090362-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006223222-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103700710-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022045274-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007102699-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007158652-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007040169-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8241936-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011053315-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8227795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8035102-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224965-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8211757-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7799597-B2 |
| priorityDate |
2004-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |