http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005153545-A1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 2004-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf6c1aaa63807070ef7bcb4f918c5128
publicationDate 2005-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2005153545-A1
titleOfInvention Methods of forming copper interconnections using electrochemical plating processes
abstract Methods of forming a copper interconnect using an ECP process is disclosed. One disclosed method includes forming a barrier metal layer on the surface of a single or dual damascene structure; forming a silver layer as a seed layer on the surface of the barrier metal layer; forming a Cu layer on the silver layer by performing an ECP process using the silver layer as the seed layer; and performing an annealing process and a chemical mechanical polishing process for the Cu layer to form a Cu interconnect.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007238294-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009102051-A1
priorityDate 2003-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 35.