| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
2004-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_455d1cd39da9279aa5682913e1053772 |
| publicationDate |
2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005142878-A1 |
| titleOfInvention |
Method for detecting end-point of chemical mechanical polishing process |
| abstract |
Disclosed is a method for detecting an end-point of a CMP process of a semiconductor device. More specifically, when all polishing processes are performed using a nitride film as a polishing barrier film, a buffer layer including nitrogen is formed on the nitride film and a polishing process is performed. Then, the concentration of NO from ammonia gas generated from the buffer layer is detected so that the nitride film may be polished to a desired target without damage of the nitride film. As a result, an end-point can be set. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946034-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007057324-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11107683-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8624334-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006148259-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11404275-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9559204-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8003470-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832908-B2 |
| priorityDate |
2003-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |