http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005130069-A1

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filingDate 2004-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59a02c81fe6cd970bec1f4129adf8d86
publicationDate 2005-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2005130069-A1
titleOfInvention Resist pattern forming method
abstract Provided is a resist pattern forming method with a bi-layer resist process, which requires only a simple developing step equivalent to that of a single-layer resist process. The resist pattern forming method comprises the steps of: forming a lower-layer resist film on a substrate; forming a diffusion preventive film on the lower-layer resist film; forming an upper-layer resist film on the diffusion preventive film; exposing the lower-layer resist film and the upper-layer resist film simultaneously; and developing the lower-layer resist film and the upper-layer resist film simultaneously. Si as an etching resistance improving component is contained in the upper-layer resist film but not in the lower-layer resist film. The diffusion preventive film prevents diffusion of Si from the upper-layer resist film to the lower-layer resist film and transmits the light at the time of exposure, while having a characteristic of being eliminated by the developer solution at the time of developing.
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Total number of triples: 27.