| abstract |
A thin-film transistor includes a substrate ( 10 ), a gate electrode ( 20 ) provided on a portion of the substrate, an insulation layer ( 30 ) arranged to cover the gate electrode and the substrate, a source or drain ( 40 ) provided on the insulation layer in a region corresponding to a region of the gate electrode, a semiconductor layer ( 50 ) arranged to cover the source or drain ( 40 ) and the insulation layer, a drain or source ( 60 ) provided on the semiconductor in a portion of a region corresponding to a region of the source or drain ( 40 ) that overlaps with the gate electrode, and a channel ( 70 ) formed between the source or drain ( 40 ) and the drain or source ( 60 ) and having a length defined by a film thickness of the semiconductor layer ( 50 ). |