| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G7-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C8-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 |
| filingDate |
2004-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d3c297b11dfd81d2f783f74cc61088 |
| publicationDate |
2005-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005117439-A1 |
| titleOfInvention |
Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory |
| abstract |
A method of manufacturing a ferroelectric film including: forming a ferroelectric initial nucleus layer by using a solution of a first ferroelectric material and electrodepositing the first ferroelectric material on an electrode by hydrothermal electrodeposition; electrically charging particles of a second ferroelectric material; forming a ferroelectric material film by electrodepositing the electrically-charged particles of the second ferroelectric material on the ferroelectric initial nucleus layer by electrophoretic deposition; and subjecting the ferroelectric material film to a heat treatment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825612-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9257209-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10497774-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3480833-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770540-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014025112-A1 |
| priorityDate |
2003-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |