| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 |
| filingDate |
2004-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed1b5b9f9ce4700521db04804b4b00fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_808a7e053f21cd01d175561509e6f13c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_953d6959f934ffd5c05eaa44fd6352e4 |
| publicationDate |
2005-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005109992-A1 |
| titleOfInvention |
Photoresist cleaning solutions and methods for pattern formation using the same |
| abstract |
Disclosed are photoresist cleaning solutions, which are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. Methods for forming patterns using the same are also disclosed. The cleaning solutions include H 2 O and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. n n n wherein R 1 and R 2 are independently H, C 1 -C 20 alkyl, C 5 -C 25 alkyl aryl or C 1 -C 10 ester; m is 1 or 2; n is an integer ranging from 10 to 300; and o is 0 or 1. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013011940-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008038671-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8563435-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1605310-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7713685-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005277069-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8133663-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8088565-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010183988-A1 |
| priorityDate |
2003-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |