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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c71b95154bc889bacc23720bfa83f980
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publicationDate 2005-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2005095843-A1
titleOfInvention Method for improving reliability of copper interconnects
abstract Doping copper interconnects ( 100 ) with silicon ( 115 ) has been shown to improve Electromigration and Via Stress Migration reliability. After copper ( 118 ) is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiH 4 over the copper interconnect ( 100 ) for 0.5 to 5 seconds at a temperature of 325-425° C.
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