| abstract |
In a method of cleaning a substrate, a photoresist pattern on a substrate is ashed. A remaining photoresist pattern on the substrate is stripped using an organic stripper. The substrate is rinsed using a tetra-methyl ammonium hydroxide (TMAH) rinse solution to remove at least one of an organic stripper, a photoresist pattern, and/or a residual byproduct or polymer, which may be adhered to the substrate. The rinse solution includes about 1 percent by weight to about 30 percents by weight of TMAH, and about 70 percents by weight to about 99 percents by weight of deionized water. |