| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16K99-0034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16K2099-0074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-038 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16K99-0059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16K99-0001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16K99-0015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C99-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16K99-0036 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F16K99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 |
| filingDate |
2004-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6033e41311562af2ee5e6d94c496d81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e72fbc111ec1ee428c5074e2680dded3 |
| publicationDate |
2005-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005026312-A1 |
| titleOfInvention |
Method for producing and testing a corrosion-resistant channel in a silicon device |
| abstract |
A method for producing a corrosion-resistant channel in a wetted path of a silicon device enables such device to be used with corrosive compounds, such as fluorine. A wetted path of a MEMS device is coated with either (1) an organic compound resistant to attack by atomic fluorine or (2) a material capable of being passivated by atomic fluorine. The device is then exposed to a gas that decomposes into active fluorine compounds when activated by a plasma discharge. One example of such a gas is CF 4 , an inert gas that is easier and safer to work with than volatile gases like ClF 3 . The gas will passivate the material (if applicable) and corrode any exposed silicon. The device is tested in such a manner that any unacceptable corrosion of the wetted path will cause the device to fail. If the device operates properly, the wetted path is deemed to be resistant to corrosion by fluorine or other corrosive compounds, as applicable. |
| priorityDate |
2002-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |