| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2003-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33a8b90e17647cb1cbf9a2b4c5f56429
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_291e26bee696655f4c9fc37fe2153e5a |
| publicationDate |
2005-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005023688-A1 |
| titleOfInvention |
Two step semiconductor manufacturing process for copper interconnects |
| abstract |
An embodiment of the invention is a method of manufacturing copper interconnects 30 on a semiconductor wafer 10 where an electroplating process is used to deposit a first layer of copper grains 30 d having an initial grain size and a second layer of copper grains 30 e having a different initial grain size. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7413974-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007031697-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009159451-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109863261-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017128308-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102017128308-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006043589-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008274294-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9005420-B2 |
| priorityDate |
2003-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |