| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1476752f2420c8f8eb53464cf7fc922b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C4-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C4-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G13-00 |
| filingDate |
2004-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf6511ca88f80805ccf6f944717df41a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be0d79f8ecf50964b15de94f9611c241
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcecef37a2e6fa2e23335cd9e39e62c3 |
| publicationDate |
2005-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005009362-A1 |
| titleOfInvention |
Method for forming dielectric thin film and dielectric thin film formed thereby |
| abstract |
A method for forming a dielectric thin film includes a film deposition step of spraying a material solution onto a heated substrate under a reduced pressure by a two-fluid technique using an inert gas to deposit a thin film. The material solution is supplied at a rate that is greater than the vaporization rate of the solvent in the film deposited on the substrate. The supply of the material solution is stopped and the solvent remaining in the film is vaporized remaining solvent. Then, the film is heat-treated in an oxidizing atmosphere. The substrate is heated to a temperature in the range of about 100° C. to about 300° C. Thus, a dielectric thin film having reliability can be formed even if the film thickness is small. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7388789-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009007938-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010279792-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8257506-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7995399-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8400840-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009092741-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009297706-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007088182-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008095936-A1 |
| priorityDate |
2002-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |