| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5433ad485d1034f61b842f274bc4ac59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_760829039fb4e5779d947d9c3ec4730d |
| publicationDate |
2005-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005003307-A1 |
| titleOfInvention |
Method for forming DRAM cell bit-line contact |
| abstract |
A method for forming DRAM cell bit-line contact is provided. First a dielectric layer is formed on a substrate on which a plurality of control gates has already been formed, and then a patterned photoresist defining a first aperture is formed thereon. Afterwards, through the patterned photoresist the dielectric layer is etched away to expose the substrate there beneath to form the bit-line contact window. Thereafter the bit-line contact windows are filled with a conductive material to form the bit-line contact. Finally, a conductor layer is formed on a previously formed isolation layer, which has a second aperture and the partially exposed bit-line contact, to fill the second aperture. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023155262-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11074965-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8878293-B2 |
| priorityDate |
2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |