| abstract |
The invention provides an integrated device with corrosion-resistant capped copper bond pads. The capped copper bond pads include at least one copper bond pad on a semiconductor substrate. An activation layer comprising one of immersion palladium, electroless cobalt, or immersion ruthernium is disposed on the copper bond pad. A first intermediate layer of electroless nickel-boron alloy is disposed on the activation layer. A second intermediate layer comprising one of electroless nickel or electroless palladium is disposed on the first intermediate layer, and an immersion gold layer is disposed on the second intermediate layer. A capped copper bond pad and a method of forming the capped copper bond pads are also disclosed. |