http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004246201-A1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3233 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-00 |
filingDate | 2004-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a566156de8622e29b593e8b2996946c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4aeabfa2de84e2518c5dba1258b7a30 |
publicationDate | 2004-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2004246201-A1 |
titleOfInvention | OLED display and pixel structure thereof |
abstract | An OLED display and pixel structure thereof. The pixel structure comprises a first transistor, a storage capacitor, a second transistor and an OLED. The first transistor has a gate terminal coupled to a scan signal and a drain terminal coupled to a data signal. The storage capacitor has two terminals coupled to a source terminal of the first transistor and a reference node, which has a second voltage. The second transistor has a gate terminal coupled to the source terminal of the first transistor and a source terminal coupled to the reference node. The OLED has a cathode coupled to a drain terminal of the second transistor and an anode coupled to a first voltage, higher than the second voltage. The first transistor or the second transistor is an amorphous silicon thin film transistor (a-Si TFT), and a light efficiency of the OLED is no less than 11 cd/A. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103441222-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9214109-B2 |
priorityDate | 2003-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.