| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate |
2004-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fb4f2f359f77e159dd4f609607755d7 |
| publicationDate |
2004-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004227142-A1 |
| titleOfInvention |
Light-emitting semiconductor device |
| abstract |
A light-emitting semiconductor device is made of a first reflection film, an active layer, a second reflection film, an electric current spreading layer, a contact layer, and a high resistance region in order. The first reflection film reflects light with a wavelength λ. The active layer is injected with electric current to emit light with a wavelength of about λ. The second reflection film reflects the light with the wavelength λ. The second reflection film has a periodical structure alternately stacked with a first semiconductor layer and a second semiconductor layer. A reflectivity with respect to the light with the wavelength λ of the second reflection film is lower than that of said first reflection film. The electric current spreading layer transmits the light with the wavelength λ. The electric current spreading layer is the same electronic conduction type as the second reflection film and has not less than half of a thickness of the second reflection film. The contact layer formed is the same electronic conduction type as the second reflection film. The high resistance region is formed in a part of the second reflection film. The light-emitting semiconductor device is capable of operating at a speed of not less than 500 Mbps. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101603473-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10446712-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011133204-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010303468-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299886-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9853188-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114203871-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I553905-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8252610-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011244616-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714655-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8597962-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7998771-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8334542-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150090998-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008069482-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018005286-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8237152-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010240162-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011159616-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10193013-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104821353-A |
| priorityDate |
2003-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |