| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate |
2003-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ab64c1565eb2fc538c576b11bc316af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2483ae21571b0157d474cc73f9f763c |
| publicationDate |
2004-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004224462-A1 |
| titleOfInvention |
Method for forming a dielectric layer and related devices |
| abstract |
A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness. |
| priorityDate |
2003-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |