| abstract |
An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2): n n n n n wherein R 1 represents hydrogen or a lower alkyl group; R 2 to R 7 each represents hydrogen, a halogen, or the like, provided that specific combinations of R 1 to R 7 are excluded; R 8 represents a lower alkyl group; R 9 to R 12 each represents hydrogen, a halogen, or the like, provided that specific combinations of R 8 to R 12 are excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process. |