| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2004-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dc223f021cc036a1ef14ac95b528108 |
| publicationDate |
2004-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004209428-A1 |
| titleOfInvention |
Split gate flash memory device and method of fabricating the same |
| abstract |
A split gate flash memory device and method of fabricating the same. A cell of the split gate flash memory device in accordance with the invention is disposed in a cell trench within a substrate to achieve higher integration of memory cells. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008239816-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7262093-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100463145-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006011966-A1 |
| priorityDate |
2002-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |