http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004195659-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
classificationIPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
filingDate 2004-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f34bf450ffd70f5148b6f16dc1567f41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4aebbef3ed7082da4fe77e9e3db16391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_237510af44eeb2230f4d1f7258000c8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18b3fdb51f34dba867063ca30358e1e6
publicationDate 2004-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2004195659-A1
titleOfInvention Hydrogenated oxidized silicon carbon material
abstract A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010028695-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1856735-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020000379-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10780675-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020000380-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016215388-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112567512-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1856735-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107399114-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110493-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010099271-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020000376-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745346-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9765429-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112567495-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7998880-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112567521-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112567511-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017334177-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006278959-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I712146-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7786552-B2
priorityDate 2000-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6497963-B1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID123490398
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID12464158
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID128952217
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID129711143
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID136069196
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID70435
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID127555560
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID10913
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID75404
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID136017815

Total number of triples: 64.