Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate |
2004-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef0fbfc342778688cbf10f137ff0cb97 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_971e0c9c604a0962ad122751dfd67edb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_005cff4c6918a979d020f095d448aa01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5691f2d6cf6c3b753f88b89442cac03 |
publicationDate |
2004-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2004171277-A1 |
titleOfInvention |
Method of forming a conductive metal line over a semiconductor wafer |
abstract |
A method of forming a conductive metal line over a semiconductor wafer including forming a diffusion barrier layer over a top surface of the semiconductor wafer, and forming a seed metal layer over the diffusion barrier layer. A conductive metal layer is formed over the seed metal layer, the conductive metal layer selectively exposing a portion of the seed metal layer on the peripheral region of the semiconductor wafer. A partial etching process is performed on the conductive metal layer to remove the portion of the seed metal layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10982346-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10066311-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11512408-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10416092-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10053793-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9988734-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009004864-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10538855-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10435807-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10087545-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10092933-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9746427-B2 |
priorityDate |
2003-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |