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filingDate 2004-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2004171277-A1
titleOfInvention Method of forming a conductive metal line over a semiconductor wafer
abstract A method of forming a conductive metal line over a semiconductor wafer including forming a diffusion barrier layer over a top surface of the semiconductor wafer, and forming a seed metal layer over the diffusion barrier layer. A conductive metal layer is formed over the seed metal layer, the conductive metal layer selectively exposing a portion of the seed metal layer on the peripheral region of the semiconductor wafer. A partial etching process is performed on the conductive metal layer to remove the portion of the seed metal layer.
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