| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-36 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate |
2002-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e71ebbbd7b6b9653a73d68ab6ed298da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9ed66c02e6855d627c4630c30ed69d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f830d9d30ccb7fe286ac4d4a2d4a8318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a01e24286a900afd69f5db5df5f2cd0 |
| publicationDate |
2004-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004169009-A1 |
| titleOfInvention |
Dry developing method |
| abstract |
A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9570291-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8173485-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010029028-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7928429-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006270122-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11537049-B2 |
| priorityDate |
2001-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |