http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004137715-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_874ffa897d8c301548b697a0d75bf104 |
| publicationDate | 2004-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2004137715-A1 |
| titleOfInvention | Methods of manufacturing semiconductor devices |
| abstract | Methods of manufacturing semiconductors are disclosed. One example method includes forming a trench through a dual damascene process, depositing a barrier metal layer on the overall surface, and depositing copper in the trench to form a copper line. The example method may also include performing a wet etching process to remove the top portion of the copper line, depositing a barrier layer on the etched copper line, and performing a planarization process to flatten the barrier layer. |
| priorityDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.