http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004094786-A1

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filingDate 2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2004094786-A1
titleOfInvention Trench buried bit line memory devices and methods thereof
abstract A memory device such as a 6F 2 memory device includes isolation trenches that are formed generally parallel to and along associated strips of active area. A conductive bit line is recessed within each isolation trench such that the uppermost surface of the bit line is recessed below the uppermost surface of the base substrate. A bit line contact strap electrically couples the bit line to the active area both along a vertical dimension of the bit line strap and along a horizontal dimension across the uppermost surface of the base substrate.
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