| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_203d2357418e846eb9d27bca66014f81 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5671
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 |
| filingDate |
2003-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bedbaf9658bb1ebf2317ec0b5b53aba2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cccb8fa006df2d2d316e09ab40db46ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b6a305b2d23dd53a97f024305633cfd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c0d8b38c4388d5ea5488727b8d4f18f |
| publicationDate |
2004-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004092066-A1 |
| titleOfInvention |
Twin NAND device structure, array operations and fabrication method |
| abstract |
A method for making a twin MONOS memory array is described where two nitride storage sites lay under the memory cell word gate. The fabrication techniques incorporate self alignment techniques to produce a small cell in which N+ diffusion the nitride storage sites are defined by sidewalls. The memory cell is used in an NAND array where the memory operations are controlled by voltages on the word lines and column selectors. Each storage site within the memory cell is separately programmed and read by application of voltages to the selected cell through the selected word line whereas the unselected word lines are used to pass drain and source voltages to the selected cell from upper and lower column voltages. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I421687-B |
| priorityDate |
2001-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |