| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2002-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0433999c4f29e0f2d1472ad9d2e2a0c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_398cc27e4cb90723525e95a05c4e1ddf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef49a2fbabcef1a6dcf92d9093670781
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f7ae5758f9d734fa33e6efd146a19b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c9cbe3f7248e6950215bc2f6497a3eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fe6f7fe3116e8777209819c013317b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10b93462744672ed20d96d9735d129ef |
| publicationDate |
2004-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004087167-A1 |
| titleOfInvention |
Method for removing polymeric residue contamination on semiconductor feature sidewalls |
| abstract |
A method for improving a photolithographic patterning process to avoid undeveloped photoresist contamination in a semiconductor manufacturing process including providing a first semiconductor feature having an anisotropically etched opening including sidewalls. The first semiconductor feature further provide an overlying photoresist layer photolithographically patterned for anisotropically etching a second semiconductor feature opening overlying and encompassing the first semiconductor feature; blanket depositing a polymeric passivation layer over the overlying photoresist layer including covering at least a portion of the sidewalls including polymeric containing residues; and, removing the polymeric passivation layer including a substantial portion of the polymeric containing residues from at least a portion of the sidewalls prior to anisotropically etching the second semiconductor feature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010311245-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7803708-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8288281-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010279508-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7132364-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6972258-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007026683-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8242544-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005095841-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006032833-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005032354-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004266178-A1 |
| priorityDate |
2002-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |