| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-12 |
| filingDate |
2002-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_411c901ea1a6513fb18aecef3506c2db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e82b4ac30bae23a91cf0b04ffb5aa92d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eeeaddf26f43c15e016ab0618f84f75b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83b401eff197383f3bc870303c425623 |
| publicationDate |
2004-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004063315-A1 |
| titleOfInvention |
Method of dry etching a semiconductor device in the absence of a plasma |
| abstract |
A method for dry etching a material deposited on semiconductor device is performed by chemically reacting the material with an etchant gas. The etching process is conducted in a reaction chamber at a predetermined temperature and predetermined pressure within the reaction chamber and without the need of generating a plasma within the chamber or applying an electrical bias to the semiconductor device. A sufficient amount of gas is introduced into the reaction chamber to selectively remove the material from the semiconductor device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011141516-A3 |
| priorityDate |
2002-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |