| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2002-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d68943c9f339c56e4d52676ea751376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a225a674b36f380862085870aeeb13ff |
| publicationDate |
2004-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004058523-A1 |
| titleOfInvention |
Method for forming low dielectric constant damascene structure while employing a carbon doped silicon oxide capping layer |
| abstract |
Within a damascene method for forming a patterned conductor layer having formed interposed between its patterns a patterned dielectric layer formed of a comparatively low dielectric constant dielectric material method, there is employed a patterned capping layer formed upon the patterned dielectric layer. The patterned capping layer is formed employing a plasma enhanced chemical vapor deposition (PECVD) method in turn employing an organosilane carbon and silicon source material, a substrate temperature of from about 0 to about 200 degrees centigrade and a radio frequency power of from about 100 to about 1000 watts per square centimeter substrate area. The patterned capping layer provides for attenuated abrasive damage to the dielectric layer incident to the damascene method and is typically partially planarized incident to the damascene method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006134906-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7217648-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006131633-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7482265-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6921727-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004180556-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8242554-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010038701-A1 |
| priorityDate |
2002-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |