| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate |
2002-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3228afd02e7568c4026ed722d6a275e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cd0cc87b5c545f4ab3827fd73b2fe8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9811a5edd5b5e1533c71bd4e64c4a067
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53e5dfd005ef21a33c9eede97161b014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_742641c93da8f3a885842a9fe0dcb538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b86bf39d0b6a27c0b45a0389605cbf6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9ef8cb4529ab0a0489b59a3acfc1c61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b63256a9094d37e0c389bac549e3bb13 |
| publicationDate |
2004-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004048187-A1 |
| titleOfInvention |
Low silicon-outgassing resist for bilayer lithography |
| abstract |
The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1820061-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1820061-A4 |
| priorityDate |
2002-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |