http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004046221-A1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544
filingDate 2003-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15b4b1596f176b0d58c827ba1b84a56a
publicationDate 2004-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2004046221-A1
titleOfInvention Wafer-level test structure for edge-emitting semiconductor lasers
abstract Wafer-level stage testing of semiconductor lasers can be facilitated by directing a light beam emitted from the semiconductor laser toward a direction different from a path of the light beam as originally emitted from the laser. A test structure can be coupled to a back facet of the laser and can include a first region separated from a second region by an inclined interface. When a light beam is emitted from the laser, the light beam can be received on the inclined interface and then directed toward a light detector for detection and evaluation.
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priorityDate 2002-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.