Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
filingDate |
2003-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08fc49ba31f17442fc63b61b194e41e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_346ddcdcc3014f68d033fedcb6743ca3 |
publicationDate |
2004-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2004043631-A1 |
titleOfInvention |
Method and apparatus for treating a semi-conductor substrate |
abstract |
This invention relates to a method of treating a semiconductor wafer and in particular, but not exclusively, to planarisation. The method consists of depositing a liquid short-chain polymer formed from a silicon containing bas or vapour. Subsequently water and OH are removed and the layer is stabilised. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019122883-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10790135-B2 |
priorityDate |
1998-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |