patent/US-2004043626-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004043626-A1

Outgoing Links

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filingDate	2002-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b69398f2d834c3c7672715041aa98db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84e3b32bafcfd9964b2b71959b26b228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8109536e910c718498ddb3b67951cc8b
publicationDate	2004-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2004043626-A1
titleOfInvention	Method of forming a film on a semiconductor substrate
abstract	Provided herein is a method for cleaning CVD reaction chambers with active oxygen species. The active oxygen species may also be mixed with active fluorine species. The active oxygen species are products of a plasma, which may be either generated within the CVD reaction chamber or generated remotely and introduced into the CVD reaction chamber.
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priorityDate	2002-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 81.