http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004023505-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2003-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c75ff9095208267dd9e91ff5483e1a03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10e2cb83698a8247dbb489a10618e2f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d674a5d9401381fcffc18a1d091b62ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f812dac79a1006b6be28793f32c62ae9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_012bf98c42e1d6b49f368a7b140678cf |
| publicationDate | 2004-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2004023505-A1 |
| titleOfInvention | Method of removing ALF defects after pad etching process |
| abstract | A method of removing ALF defects on a device after pad etching process, comprising the steps of: (a) applying EKC solution substantially comprising hydroxylamine (HDA) to the device for about 30 min; (b) applying an intermediate rinse chemical, such as Isopropyl alcohol (IPA) or N-methyl pyrrolidone (NMP), to the device for about 0.5 min to 3 min; and (c) applying water to the device. The ALF defects are effectively removed in the method of the invention, and the bad wafers can be turned to the good ones. Consequently, the primary cost during the manufacture is greatly decreased. |
| priorityDate | 2002-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.