| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-122 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D333-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D333-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C309-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C309-66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D333-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D333-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C309-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C309-65 |
| filingDate |
2003-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57edfff5338b3b834d5b5240474a3c44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7188bef92b0900d90e0334644086507e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f05ed2e5bedd3e52a1e8b8725a1e2b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ac225305aa5d9f151668fe8399c1f04 |
| publicationDate |
2004-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004013974-A1 |
| titleOfInvention |
Alkylsulfonyloximes for high-resolution i-line photoresists of high sensitivity |
| abstract |
The invention describes the use of oxime alkyl sulfonate compounds of formula 1 n n n R 0 is either an R 1 —X group or R 2 ; n X is a direct bond, an oxygen atom or a sulfur atom; n R 1 is hydrogen, C 1 -C 4 alkyl or a phenyl group which is unsubstituted or substituted by a substituent selected from the group consisting of chloro, bromo, C 1 -C 4 alkyl and C 1 -C 4 -alkyloxy; n R 2 is hydrogen or C 1 -C 4 alkyl; and n R 3 is straight-chain or branched C 1 -C 12 alkyl which is unsubstituted or substituted by one or more than one halogen atom; n as photosensitive add generator in a chemically amplified photoresist which is developable in alkaline medium and which is sensitive to radiation at a wavelength of 340 to 390 nanometers and correspondingly composed positive and negative photoresists for the above-mentioned wavelength range. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7189489-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2420890-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6986981-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018004909-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004170924-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004002007-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8628907-B2 |
| priorityDate |
1996-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |