| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate |
2003-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec5c0ce028cc94a18a72766a7858027b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30d76349b6118cd2ff35416fc6e141be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1d35a7fffbdc72c0af5aaf4afec2de5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62c6c327bb0cefa190617ac6f1e8fee4 |
| publicationDate |
2003-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003230773-A1 |
| titleOfInvention |
Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory |
| abstract |
A ferroelectric capacitor having a ferroelectric layer and a pair of electrodes, in which the ferroelectric layer contains carbon or carbon atoms of 5×10 18 cm −3 or less, and the pair of electrodes is formed by a MOCVD (Metal Organic Chemical Vapor Deposition) method. A process for manufacturing a ferroelectric capacitor having the steps of forming a ferroelectric layer on one of a pair of electrodes; heating the layer at a temperature higher than when forming the layer, and to form the other electrode on the ferroelectric layer, or the steps of forming a ferroelectric layer on one of a pair of electrodes; forming the other electrode on the ferroelectric layer; and heating the layer at a temperature higher than when forming the layer to form the other electrode on the ferroelectric layer, to control carbon atoms of the ferroelectric layer to be 5×10 18 cm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1662551-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006108621-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004256648-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006118847-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009321801-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1662551-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7892916-B2 |
| priorityDate |
2002-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |